Tokyo – Renesas Technology Corp. has developed a new SRAM memory cell structure that combines SRAM and DRAM technologies. The device is about half the size of a conventional SRAM cell, but still has ...

Tezzaron Semiconductor Inc. last week announced a new type of pseudo-static memory technology intended to provide an alternative to embedded SRAM or DRAM in discrete memory ICs and systems-on-chip.

Chipmakers are beginning to incorporate multiple types and flavors of DRAM in the same advanced package, setting the stage for increasingly distributed memory but significantly more complex designs.

SRAM security concerns are intensifying as a combination of new and existing techniques allow hackers to tap into data for longer periods of time after a device is powered down. This is particularly ...